Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

By S. Mangin, Dafine Ravelosona, Jordan A. Katine, E. Fullerton. IEEE International Magnetics Conference, 2006

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Roadmap for Emerging Materials for Spintronic Device Applications (2015, background): “[73] and Meng and Wang [74] also demonstrated the STT switching in CPP-GMR nanopillars with perpendicularly magnetized Co/Ni and Co/Pt multilayers, respectively.”
Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, background): “The critical current density [76] is The switching time is given by the same expression (50).”
A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, background): “IC0=α γ e μBg MSHKV = 2α γ e μBg E (1)”
Spin-transfer torque RAM technology: Review and prospect (2012, unknown): “The threshold current density for PMTJs is expressed by the following equations [31,33]: J c0 1⁄4 aceMst=ðlBgð0ÞÞ 1⁄2 ðHex þ HdipÞ þ ðHkp Ms=l0Þ ð4Þ J c0 1⁄4 aceMst=ðlBgðpÞÞ 1⁄2 ðHex þ HdipÞ ðHkp Ms=l0Þ ð5Þ On the other hand, the thermal stability factor D defined by the energy barrier (E), Boltzman”