Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

By J. Hayakawa, Shoji Ikeda, Young Min Lee, R. Sasaki, T. Meguro, Fumihiro Matsukura, H. Takahashi, Hideo Ohno. 2005

193 citations recorded by the source corpus.

Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270 and 300°C are found to be as low as 7.8×105 and 8.8×105 A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49 and 73%, respectively. Further annealing of the samples at 350°C increases TMR ratio to 160%, while accompanying Jc increases to 2.5×106 A/cm2. We attribute the low Jc to the high spin-polarization of tunnel current and small MsV product of the CoFeB single free layer, where Ms is the saturation magnetization and V the volume of the free layer.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/f829e3fcdb74c2d04093d5a541e2745c70739cc4

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Memristor-based neural networks (2013, background): “Magnetic tunnel junctions with very thin (0.7 nm) magnesia tunnel barriers can exhibit current-induced magnetic switching , which is sometimes called spin transfer torque switching [89–91].”
High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits (2009, methodology): “either by applying a magnetic field [1], or by injecting a current density [2], [3], [7] using the Spin Transfer Torque (STT) effect”
Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, methodology): “H loop and the R versus pulsed current Ip with τp = 10 ms under an applied magnetic field of −32 Oe of SyF free MTJ with Ru (0.7) spacer, respectively.”
Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions (2008, unknown): “In contrast, for parallel alignments (C and D), resistances remain almost constant, as is commonly observed in MgO-based MTJ”