Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As
By M. Sawicki, Daichi Chiba, A. Korbecka, Y. Nishitani, J. Majewski, Fumihiro Matsukura, T. Dietl, Hideo Ohno. 2009
201 citations recorded by the source corpus.
The transition from a ferromagnetic to a paramagnetic state is observed directly as the density of carriers that mediate spin–spin coupling is varied. The measurement was performed on thin films of GaMnAs and was made possible by superconducting quantum interference devices (SQUIDS).
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c3410ab4148a449132769a2d82e61054f2320089
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “From (Sawicki et al , 2010).”
- Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “However, the Fermi level is often pinned by gap surface states, which limit the TC changes to about 20 K in (Ga,Mn)As (Chiba et al., 2006a, 2010; Nishitani et al., 2010; Sawicki et al., 2010), even if a polymer electrolyte is employed (Endo et al., 2010a).”