Spin polarization of tunneling current from ferromagnet/Al2O3 interfaces using copper-doped aluminum superconducting films

By D. Monsma, Stuart S. P. Parkin. 2000

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Spin-polarised currents and magnetic domain walls (2005, methodology): “The values for the spin-polarisation were extracted by fitting the data curves with the following fitting parameters indicated in the figure: superconducting gap , depairing parameter , and spin–orbit parameter b, as defined in a model given in [29].”
Extrinsic magnetotransport phenomena in ferromagnetic oxides (2001, result): “Monsma and Parkin (2000b) reported an ageing of the spin-polarization of Ni films as observed in tunnelling studies and related it to chemical processes at the Ni-Al2O3 interface; this observation might explain the discrepancy between their data and the classical values of Tedrow and Meservey…”
Spin-transfer torque RAM technology: Review and prospect (2012, background): “However, it was quite difficult to obtain a TMR ratio of more than 70% because the value is close to the theoretical upper limit [14] predicted with Julliere’s formula [11], in which the TMR ratio only depends on the spin polarization of two ferromagnetic layers.”
Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “2 K for CoFe [23], the TMR ratio becomes slightly over 70%, indicating that Al-O-based MTJs were reaching its limit, according to the simplest model.”