A review of Ga2O3 materials, processing, and devices

By S. Pearton, Jiancheng Yang, Patrick H. Cary, Fan Ren, J. Kim, Marko J. Tadjer, M. Mastro. 2018

2,585 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/c89baac37fef367302467309f1ec05065f2a35c7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Marko J. Tadjer
7. Jianwu Sun
8. Renxu Jia

In Materials Chemistry

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Marko J. Tadjer
7. Jianwu Sun
8. Renxu Jia

In Renewable Energy, Sustainability and the Environment

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “Zhou et al. ZHANG et al.: PROGRESS OF ULTRA-WIDE BAND-GAP GA2O3 SEMICONDUCTOR MATERIALS IN POWER MOSFETs 5167 [17] reported on back-gate D-mode and E-mode GOOI FETs with a SiO2/Si substrate and a high-doped Ga2O3 membrane (Sn-doped, 2.7 × 1018 cm−3), they demonstrated Ids,sat of 600/450 mA/mm for D/”
• Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “Another example is Ga2O3, which suffers from a very low thermal conductivity (kT) of 11–27 W m−1 K−1 [15, 16] (table 1).”