Radiation damage effects in Ga2O3 materials and devices

By Jihyun Kim, S. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Suhyun Kim, A. Polyakov. Journal of Materials Chemistry C, 2019

173 citations recorded by the source corpus.

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7ba47b72a33befcbf19110b600e193a0e0dbb003

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In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Materials Chemistry

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “DIBL effect [19], [20], gate oxide integrity analyze, hot carrier effect, termination reliability analyze, radiation damage effects [224]–[227], and stress-induced leakage”