Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors

By S. Heinze, M. Radosavljevic, J. Tersoff, Phaedon Avouris. 2003

132 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/4dc5b3f885815350864f62d03082e532f6145827

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In Materials Chemistry

Citations in the corpus

A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (2003, background): “A previous study, which omitted the charge on the nanotube, concluded that simply increasing the gate dielectric constant everywhere did not change the band profile thus had no effect on the - characteristics of SB CNTFETs [ 3 ].”
Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007, background): “solution is very small compared to the Laplace solution at the quantum capacitance limit [19].”
Toward Nanowire Electronics (2008, background): “However, one has to keep in mind that this implies a deteriorated ON-state current due to a small BTBT probability.”
Electronic and transport properties of nanotubes (2007, background): “Léonard and Tersoff, 1999; Heinze et al., 2003".”
High-performance carbon nanotube field-effect transistor with tunable polarities (2005, background): “Both simulations and experimental results have shown that the switching performance of CNFETs, measured by the inverse subthreshold slope S = (dlogId/dVgs)−1, and the ON-state current can be improved by decreasing the gate oxide thickness [8]‐[11], [ 26 ].”
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “In fact S is proportional to √ tox [29].”
Carbon Nanotube Electronics and Optoelectronics (2004, methodology): “Instead a levelling off of S at low oxide thickness was observed [ 14 ].”