A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

By YiFeng Wu, Matt Jacob-Mitos, Marcia Moore, S. Heikman. IEEE Electron Device Letters, 2008

248 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f329376e9ccc126afe9f535c27e10e97ff389780

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In Condensed Matter Physics

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Citations in the corpus

Evaluation and Application of 600 V GaN HEMT in Cascode Structure (2014, background): “The switching frequency has been continuously pushed up to several megahertz to reduce the passive components size and increase power density [4], [5], [10], [11], [13], [14].”
Evaluation of the switching characteristics of a gallium-nitride transistor (2011, methodology): “From the works presented in [4-15], it can be seen that GaN devices are reaching the point of maturity where broader investigation of its impact on switching converters is possible and necessary [16].”
Analytical loss model of high voltage GaN HEMT in cascode configuration (2014, background): “A progressively larger number of GaN devices have been manufactured for in field applications ranging from low power voltage regulators to high power infrastructure base-stations [4]-[9].”
Circuit-Oriented Treatment of Nonlinear Capacitances in Switched-Mode Power Supplies (2015, background): “Equation (1) is sufficiently accurate for simple devices [13], [14], but errant for more complex, modern devices, including superjunction devices [15] as well as varying structures of GaN [16]–[18] and SiC [19], [20] switching devices.”
Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters (2017, background): “Hard-switching GaNbased power converter such as synchronous buck converter and boost converter and inverter demonstrated great efficiency improvement over the Si-based counterparts in [11]–[16].”
High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology (2010, background): “Due to their high-electron mobility (μe) and high critical electric field (Ec), GaN-based power converters enable more efficient and compact power-conversion systems than the Si-based converters [1].”
A Multiloop Method for Minimization of Parasitic Inductance in GaN-Based High-Frequency DC–DC Converter (2017, background): “Therefore, switching frequency of dc–dc converters can be greatly increased by using gallium nitride (GaN) devices [5]–[11].”