40-W/mm Double Field-plated GaN HEMTs

By YiFeng Wu, M. Moore, A. Saxler, T. Wisleder, Primit Parikh. Device Research Conference, 2006

367 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0eb73712810ed86fc4e3beff9741f976cab1edda

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Umesh K. Mishra
2. Stanislav Vitanov
3. Rüdiger Quay
4. Stephan Maroldt
5. Vassil Palankovski
6. S. Karpov

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Umesh K. Mishra
5. YiFeng Wu
6. Alessandro Chini
7. Thomas E. Kazior
8. Likun Shen

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Umesh K. Mishra
5. YiFeng Wu
6. Thomas E. Kazior
7. Stanislav Vitanov
8. Rüdiger Quay

Citations in the corpus

• AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, background): “1 GHz [2] and 40 W/mm at 4 GHz [3]; GaAs values are in the range 0.”
• Comparison of GaN HEMTs on Diamond and SiC Substrates (2007, background): “A lGaN/GaN high-electron-mobility transistors (HEMTs) are well suited for high-frequency and high-power applications [1], [2].”
• High-temperature modeling of AlGaN/GaN HEMTs (2009, background): “6 W/mm at the Ka-band [2] and 40 W/mm at the C-band [3], and the devices are considered for high-power high-frequency applications at elevated temperatures [4].”
• A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, background): “The 1-mA/mm (gate current) breakdown voltage of this structure exceeds 150 V. Unit cell devices exhibit CW on-wafer output power levels of 4–5 W/mm when measured on a load–pull bench at 28 V and 3.5 GHz.”
• A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz (2008, background): “The GaN HEMT in this letter is a high-voltage version of previous depletion-mode microwave devices [ 2 ].”
• GaN-Based RF Power Devices and Amplifiers (2008, background): “Implementing a field plate on a dielectric layer at the drain side of the GaN HEMTs has resulted in some of the most significant and exciting improvements [10], [42], [ 43 ].”
• A Survey of Wide Bandgap Power Semiconductor Devices (2014, background): “1 W/mm in 1996 up to 40 W/mm recently [46].”