Role of scattering in nanotransistors
By Alexei Svizhenko, M. Anantram. 2002
190 citations recorded by the source corpus.
We model the influence of scattering along the channel and extension regions of dual gate nanotransistors. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. This is in contrast to a popular belief that scattering in the source end of a nanotransistor is significantly more detrimental to the drive current than scattering elsewhere. As the channel length becomes much larger than the scattering length, scattering in the drain-end is less detrimental to the drive current than scattering near the source-end of the channel. Finally, we show that for nanotransistors, the classical picture of modeling the extension regions as simple series resistances is not valid.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/df2b6c82508730cd3aa5bf08fb823caa2b65257a
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Mark S. Lundstrom
- Dmitri E. Nikonov
- Supriyo Datta
- M. Anantram
- Enrico Sangiorgi
- K. Rumpf
- P. Granitzer
In Electrical and Electronic Engineering
- Mark S. Lundstrom
- Dmitri E. Nikonov
- M. Anantram
- Supriyo Datta
- Zhibin Ren
- Sebastien Goasguen
- R. Venugopal
- Enrico Sangiorgi
Citations in the corpus
- Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain (2005, background): “It has been suggested that in ultrashort devices, back-scattering at the drain could have a relevant impact on [6], [33].”
- nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs (2003, methodology): “Scattering has been treated rigorously in NEGF simulations of MOSFETs [ 30 ], [36], but the resulting computational burden limits the use of such simulations.”
- Modeling of Nanoscale Devices (2006, methodology): “lengths. The channel length is 25 nm. (From [ 24 ].) Anantram et al.: Modeling of Nanoscale Devices”