Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs

By David Esseni, Antonio Abramo. 2003

138 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8f9316af98b1dbc7cf93006cde571cc36ee61e66

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In Electrical and Electronic Engineering

1. Enrico Sangiorgi
2. Luca Selmi
3. Antonio Abramo
4. David Esseni

Citations in the corpus

• Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs (2003, methodology): “Screening was included for intrasubband transitions according to a numerically calculated expression of the 2-D static dielectric function [18], [19], [ 29 ].”
• Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters (2006, background): “SiO2 bottom oxide, most probably in the bulk HfO2 layer or at the SiO2/HfO2 interface [18], [34].”