Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

By P. Palestri, David Esseni, S. Eminente, C. Fiegna, Enrico Sangiorgi, Luca Selmi. IEEE Transactions on Electron Devices, 2005

150 citations recorded by the source corpus.

In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L/sub G/ down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1c13c41e34d2d7ab1802c649364e66a0875cec39

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In Electrical and Electronic Engineering

1. Vladislav S. Yakovlev
2. Yang Yang
3. A. O'Neill
4. Claudio Fiegna
5. Enrico Sangiorgi
6. F. Krausz

Citations in the corpus

• Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation (2008, background): “1) Above-Threshold I–V Characteristics: MOSFETs with gate length well below 100 nm feature a quasi-ballistic transport as the carriers that are traveling along the channel can suffer only a very small number of scattering events [33], [34].”
• Colloquium: Strong-field phenomena in periodic systems (2017, background): “While firstgeneration semiconductor devices were based on a diffusive transport, today’s nano-MOSFETs (metal-oxide-semiconductor field-effect transistor) operate in the quasiballistic and highfield regimes (Datta, 2012; Frank et al., 2001; Martin et al., 2004; Palestri et al., 2005).”