Enrico Sangiorgi
Electrical and Electronic Engineering · 2001–2017
A researcher in the Science corpus: 5 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 28 citations into it
Whom Enrico Sangiorgi trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Enrico Sangiorgi's perspective
Ordered by how strongly the researchers Enrico Sangiorgi trusts endorse each paper. Same corpus, a different order for every researcher.
- On the performance limits for Si MOSFETs: a theoretical study
- Role of scattering in nanotransistors
- Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
- Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
- Essential physics of carrier transport in nanoscale MOSFETs (International Conference on Simulation of Semiconductor Processes and Devices)
- Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
- A compact scattering model for the nanoscale double-gate MOSFET
- Silicon-on-Nothing (SON)-an innovative process for advanced CMOS
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
Their papers
- Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application (2001) — 133 citations
- Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs (2003) — 163 citations
- Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain (2005) — 150 citations
- Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017) — 144 citations
- Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation (2008) — 137 citations