Essential physics of carrier transport in nanoscale MOSFETs

By Mark S. Lundstrom, Zhibin Ren, Supriyo Datta. International Conference on Simulation of Semiconductor Processes and Devices, 2000

580 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/31d7b24b9d4674b83bf04642bcca24d097429ede

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In Electrical and Electronic Engineering

Citations in the corpus

Role of scattering in nanotransistors (2002, methodology): “• Device A (similar to the Purdue dual gate MOSFET [17].)”
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, background): “[3]–[5] and has been quantitatively analyzed in detail by many research groups”
A computational study of thin-body, double-gate, Schottky barrier MOSFETs (2002, background): “For the MOSFET (or the negative barrier SBFET), where and are the carrier density and the average carrier velocity at the beginning of the channel (the top of the source-to-channel barrier), respectively [15].”
A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements (2015, methodology): “VIRTUAL SOURCE MODEL FOR CNFETS The VS model is a semi-empirical model with only a few physical parameters, originally developed for short-channel Si MOSFETs that have a gate-controlled source-injection barrier.”
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters (2009, background): “On the other hand, while the ballistic velocity increases monotonically with VGS [3], Monte Carlo simulations demonstrate that the virtual source velocity is almost constant at high VGS [1] since carrier scattering also increases with the gate voltage.”
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain (2005, methodology): “that verifies the assumption of [14] and [15].”
A compact scattering model for the nanoscale double-gate MOSFET (2002, methodology): “But the work in [10] (see also [ 13 ]) establishes the fact that the backscattering that is most important to the drain current is heavily weighted toward the source.”
Energy dissipation and transport in nanoscale devices (2010, background): “However, the electron mobility is typically determined by the temperature and scattering mechanisms near the source of the channel in such quasi-ballistic devices [65], and does not appear to be strongly affected by the additional LO population.”
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation (2008, background): “According to Lundstrom and Ren [36], r can be expressed as”
Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia (2008, methodology): “Current is determined by the charge and the velocity at the top of the barrier [59].”