Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

By M. Jurczak, Thomas Skotnicki, M. Paoli, B. Tormen, J. Martins, J. Regolini, D. Dutartre, P. Ribot, D. Lenoble, R. Pantel and 1 more. 2000

201 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5c71f7b4d4d87cea61b9b3f1f262eb64b5068198

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In Electrical and Electronic Engineering

1. Enrico Sangiorgi
2. Luca Selmi
3. David Esseni

Citations in the corpus

• Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia (2008, background): “available today [47] (with pretty good uniformity and quality) and can still be thinned further by oxidation; 2) etched Fins—for DELTA [48], FinFET [49], or trigate transistors [73], very thin films have been demonstrated, but due to the use of sublithographic resolution techniques (Tsi needs to be ”
• Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application (2001, background): “In particular, when is scaled down to approximately 5 nm, devices with a channel length of about 40 nm have already been demonstrated using essentially undoped silicon layers [9], [10].”