Antonio Abramo

Electrical and Electronic Engineering · 2003

A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 11 citations into it; #10,530 of 16,539 by trust here, #13,553 by citations

Whom Antonio Abramo trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. David Esseni
2. Massimo V. Fischetti

Who trusts Antonio Abramo overall

1. David Esseni

Papers from Antonio Abramo's perspective

Ordered by how strongly the researchers Antonio Abramo trusts endorse each paper. Same corpus, a different order for every researcher.

1. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
2. Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
3. Numerical recipes in C
4. Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
5. Impact of gate direct tunneling current on circuit performance: a simulation study
6. Γ and B
7. Silicon-on-Nothing (SON)-an innovative process for advanced CMOS
8. On the performance limits for Si MOSFETs: a theoretical study
9. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
10. Essential physics of carrier transport in nanoscale MOSFETs (International Conference on Simulation of Semiconductor Processes and Devices)

Their papers

• Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs (2003) — 163 citations
• Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs (2003) — 138 citations