Impact of gate direct tunneling current on circuit performance: a simulation study

By Chang-hoon Choi, KiYoung Nam, Zhiping Yu, R. Dutton. 2001

144 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/27f161b23fea4d997875257ad480a99cbb7718af

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In Electrical and Electronic Engineering

1. Antonio Abramo
2. David Esseni

Citations in the corpus

• Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs (2003, background): “Numerous papers have been recently devoted to assess the limitations of gate oxide scaling imposed either by reliability [4]‐[8] or by excessive leakage [ 9 ].”
• PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation (2006, background): “With CMOS technology scaling, tox is continuously scaled down, and consequently, the gate current can no longer be neglected for modern and future CMOS technologies as it may start to affect circuit performance [73], [74].”