Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
By S. Kaneko, M. Kuroda, M. Yanagihara, A. Ikoshi, Hideyuki Okita, T. Morita, Kenichiro Tanaka, M. Hikita, Y. Uemoto, Satoru Takahashi and 1 more. International Symposium on Power Semiconductor Devices and IC's, 2015
181 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/18efb57926c9a484cf473a31151380bdb00803e3
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In Condensed Matter Physics
- Gaudenzio Meneghesso
- Kevin J. Chen
- Matteo Meneghini
- Enrico Zanoni
- Shu Yang
- Kuang Sheng
- Shaowen Han
- Oliver Hilt
In Electrical and Electronic Engineering
- Kevin J. Chen
- Matteo Meneghini
- Gaudenzio Meneghesso
- Enrico Zanoni
- Oliver Hilt
- Shu Yang
- Kuang Sheng
- YiFeng Wu
Citations in the corpus
- Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, methodology): “[94] has developed an HD-embedded p-GaN HEMT, in which an additional p-GaN structure in the vicinity of the drain electrode is electrically connected to the drain.”
- GaN-on-Si Power Technology: Devices and Applications (2017, background): “Recently, to solve this current-collapse problem, a hybrid-drain-embedded GIT (HD-GIT) was proposed [13], where an additional p-GaN layer is grown besides the drain electrode and is connected to the drain electrode,”
- Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, background): “[39] recently proposed to use hole injection from the drain to compensate the trapped electrons, thus eliminating the current collapse.”
- Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses (2019, background): “Available: https://gansystems.com [6] S. Kaneko et al., “Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain,” in Proc.”
- Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, unknown): “8(b) [33], [43].”
- Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016, methodology): “fluorine plasma treatment [7], p-type gate structure employing a p-GaN [2], [8]–[13], or a p-AlGaN gate [3], [14]–[16].”