Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking
By Eldad Bahat Treidel, Oliver Hilt, R. Zhytnytska, A. Wentzel, C. Meliani, J. Wurfl, G. Trankle. IEEE Electron Device Letters, 2012
166 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/5df14f509b36363c4ce4a3054d052df74083aee0
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “On the other hand, the reverse leakage current of our GaN-on-Si vertical diodes (∼10−2 A/cm2 at −200 V) is comparable to the stateof-the-art leakage reported for lateral AlGaN/GaN diodes on Si [17] and SiC [18] substrates (∼10−2 A/cm2, estimated using a reported leakage of ∼10−6 A/mm and an effectiv”
- 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon (2015, methodology): “Similar Vturn-on values have been reported previously in recessed anode GaN SBDs where the anode metal is in direct contact with the 2DEG at the AlGaN/GaN interface [1], [5].”