Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement
By Eldad Bahat Treidel, Oliver Hilt, F. Brunner, J. Wurfl, G. Trankle. IEEE Transactions on Electron Devices, 2008
133 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/8aa4024ee2d1cedf8aa61b91b69a8cbae25658d3
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (2010, methodology): “This can be achieved either by using a heterostructure buffer as demonstrated in [8] or by introducing”