Van de Sanden

Electrical and Electronic Engineering · 2000–2011

A researcher in the Science corpus: 17 papers; trusts 6 researchers and is trusted by 5 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 90 citations into it; #4,864 of 16,539 by trust here, #2,363 by citations

Whom Van de Sanden trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. B. Hoex
2. M. Kerr

Who trusts Van de Sanden overall

1. G. Dingemans
2. Jan Schmidt
3. W. Kessels
4. B. Hoex

Papers from Van de Sanden's perspective

Ordered by how strongly the researchers Van de Sanden trusts endorse each paper. Same corpus, a different order for every researcher.

1. Numerical recipes: the art of scientific computing, 3rd Edition
2. I and J
3. Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD
4. Buffalo Medical and Surgical Journal: Book Reviews
5. and s
6. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
7. Bio-inspired synthesis of xishacorenes A, B, and C, and a new congener from fuscol
8. Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks
9. The physics of solar cells
10. Extreme oxygen sensitivity of electronic properties of carbon nanotubes (Science)

Their papers

• Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 (2006) — 723 citations
• Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 (2007) — 414 citations
• Silicon surface passivation by atomic layer deposited Al2O3 (2008) — 389 citations
• Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition (2011) — 165 citations
• Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges (2011) — 807 citations
• Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition (2010) — 208 citations
• Optical constants of graphene measured by spectroscopic ellipsometry (2010) — 415 citations
• Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks (2010) — 183 citations
• Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3 (2010) — 133 citations
• Conformality of Plasma-Assisted ALD: Physical Processes and Modeling (2010) — 161 citations
• In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition (2009) — 284 citations
• Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon (2009) — 156 citations
• Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation (2008) — 154 citations
• On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3 (2008) — 534 citations
• Determining the material structure of microcrystalline silicon from Raman spectra (2003) — 374 citations
• Vacancies and voids in hydrogenated amorphous silicon (2003) — 263 citations
• X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films (2000) — 480 citations