G. Dingemans
Electrical and Electronic Engineering · 2009–2012
A researcher in the Science corpus: 7 papers; trusts 8 researchers and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 111 citations into it; #6,462 of 16,539 by trust here, #5,811 by citations
- Materials Chemistry — 56 citations into it; #5,768 of 11,513 by trust here, #8,733 by citations
Whom G. Dingemans trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- B. Hoex
- Jan Schmidt
- M. Kerr
- Van de Sanden
- A. Cuevas
- W. Kessels
- S. George
- John Robertson
- J. Benick
- Martin A. Green
Who trusts G. Dingemans overall
Papers from G. Dingemans's perspective
Ordered by how strongly the researchers G. Dingemans trusts endorse each paper. Same corpus, a different order for every researcher.
- I and J
- Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
- Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
- Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD
- The physics of solar cells
- Numerical recipes: the art of scientific computing, 3rd Edition
- Charge Carrier Separation in Solar Cells (IEEE Journal of Photovoltaics)
- The Irresistible Charm of a Simple Current Flow Pattern – 25% with a Solar Cell Featuring a Full-Area Back Contact
- Laser‐fired rear contacts for crystalline silicon solar cells
- A Free and Fast Three-Dimensional/Two-Dimensional Solar Cell Simulator Featuring Conductive Boundary and Quasi-Neutrality Approximations (IEEE Transactions on Electron Devices)
Their papers
- Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells (2012) — 738 citations
- Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface (2012) — 159 citations
- Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition (2011) — 165 citations
- Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition (2010) — 208 citations
- Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks (2010) — 183 citations
- Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3 (2010) — 133 citations
- Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon (2009) — 156 citations