On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

By B. Hoex, J. Gielis, Van de Sanden, W. Kessels. 2008

534 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f64162fa075e629da67220504e72350b5c8608a7

Citations in the corpus

• High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, unknown): “of negative charges reported for ALD and PECVD aluminum oxide [13], [16].”