Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

By G. Dingemans, Nm Nick Terlinden, M. Verheijen, Van de Sanden, W. Kessels. 2011

165 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8455b9df20e90349d2a76fb0602cb75daf9b3e51