Jan Schmidt
Electrical and Electronic Engineering · 2001–2018
A researcher in the Science corpus: 20 papers; trusts 8 researchers and is trusted by 15 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 93 citations into it; #2,228 of 16,539 by trust here, #2,305 by citations
- Materials Chemistry — 37 citations into it; #9,881 of 11,513 by trust here, #6,301 by citations
- Atomic and Molecular Physics, and Optics — 34 citations into it; #2,276 of 7,135 by trust here, #1,733 by citations
Whom Jan Schmidt trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Jan Schmidt overall
- G. Dingemans
- T. Dullweber
- B. Hoex
- A. Cuevas
- W. Kessels
- A. Fell
- R. S. Bonilla
- K. Bothe
- A. Richter
- M. Kerr
Papers from Jan Schmidt's perspective
Ordered by how strongly the researchers Jan Schmidt trusts endorse each paper. Same corpus, a different order for every researcher.
- Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks
- Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature
- Light Induced Degradation of Rear Passivated mc-Si Solar Cells
- Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature
- Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
- Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon
- The Passivated Emitter and Rear Cell (PERC): From conception to mass production
- Development of high‐performance multicrystalline silicon for photovoltaic industry
- Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells
- Silicon surface passivation by atomic layer deposited Al2O3
Their papers
- Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks (2009) — 191 citations
- Improved quantitative description of Auger recombination in crystalline silicon (2012) — 803 citations
- Organic-silicon heterojunction solar cells on n-type silicon wafers: The BackPEDOT concept (2014) — 162 citations
- Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 (2007) — 414 citations
- Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 (2008) — 440 citations
- Fundamental boron–oxygen‐related carrier lifetime limit in mono‐ and multicrystalline silicon (2005) — 303 citations
- Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature (2016) — 147 citations
- Silicon surface passivation by atomic layer deposited Al2O3 (2008) — 389 citations
- Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks (2001) — 240 citations
- Electronically activated boron-oxygen-related recombination centers in crystalline silicon (2006) — 338 citations
- Surface passivation of crystalline silicon solar cells: Present and future (2018) — 370 citations
- Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016) — 183 citations
- Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon (2015) — 456 citations
- 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon (2012) — 259 citations
- Electronic and chemical properties of the c-Si/Al2O3 interface (2011) — 240 citations
- Understanding junction breakdown in multicrystalline solar cells (2011) — 148 citations
- Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography (2007) — 134 citations
- Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon (2004) — 386 citations
- Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide (2001) — 235 citations
- Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride (2001) — 143 citations