Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

By B. Hoex, Jan Schmidt, R. Bock, P. Altermatt, Van de Sanden, W. Kessels. 2007

414 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fc6828ba7170b21ba0cf13ddac8f05db3bd736f5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. B. Macco
2. Jimmy Melskens
3. L. Black
4. S. Smit
5. W. Kessels
6. B. V. D. Loo

Citations in the corpus

• High-Efficiency n-Type HP mc Silicon Solar Cells (2017, neutral): “3 μm) and then were passivated by PA-ALD-deposited Al2O3 (10 nm) [25], [26].”
• High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide (2010, neutral): “2049190 and heavily doped p-type Si surfaces [9], [10].”
• Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, methodology): “instance, a hole-selective tunneling contact has been devised by placing an ultrathin (< 2 nm) layer of Al2O3 (which is known for its surface passivating properties, large bandgap, and large negative fixed charge density (−Qf ) [116], [117]) between n-Si and an aluminum doped zinc oxide (ZnO:Al) fil”