Silicon surface passivation by atomic layer deposited Al2O3

By B. Hoex, Jan Schmidt, P. Pohl, Van de Sanden, W. Kessels. 2008

389 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d434d3c78ca05d9e444635eb3012785ca92f1e92

How researchers see this paper

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In Electrical and Electronic Engineering

1. T. Dullweber
2. Jan Schmidt

In Materials Chemistry

1. Jan Schmidt

Citations in the corpus

• Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016, background): “Whereas most initial research work on AlOx passivation was performed on lab-type low-throughput atomic layer deposition (ALD) of AlOx layers [14], [15], from 2009 onwards, high-throughput tools and processes for industrial mass production have been developed, such as PECVD [16]–[20] and spatial ALD ”