Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks

By Jan Schmidt, M. Kerr, A. Cuevas. 2001

240 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/589bbdb39cc8892683daeb7d06010cb42311b924

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In Atomic and Molecular Physics, and Optics

1. Jan Schmidt
2. T. Dullweber

In Electrical and Electronic Engineering

1. T. Dullweber
2. Jan Schmidt

Citations in the corpus

• Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells (2002, methodology): “reported open-circuit voltages of 667 3 mV for a planar, all-nitride passivated solar cell and 661 mV for the respective reference cell.(7,9) The contact openings were defined by photolithography and chemical etching for these cells.”
• Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review (2016, background): “Furthermore, it was demonstrated [52] that the surface passivation by SiO2 /SiNx stacks improves considerably during high-temperature annealing, which was attributed to the diffusion of hydrogen from the hydrogen-rich PECVD-SiNx layer to the SiO2 /c-Si interface, where the hydrogen effectively passi”