Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

By B. Hoex, Sbs Stephan Heil, E. Langereis, Van de Sanden, W. Kessels. 2006

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Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, methodology): “instance, a hole-selective tunneling contact has been devised by placing an ultrathin (< 2 nm) layer of Al2O3 (which is known for its surface passivating properties, large bandgap, and large negative fixed charge density (−Qf ) [116], [117]) between n-Si and an aluminum doped zinc oxide (ZnO:Al) fil”
19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon (2012, methodology): “Our process applies aluminum oxide for surface passivation [6–8], replaces the previously used photolithography by laser contact opening with a homebuilt laser system [9], avoids high temperature oxidations, and uses an emitter contacting scheme with an AlOx tunneling layer from atomic layer deposit”
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 (2008, methodology): “Recently, it was shown that thin films of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) provide an excellent level of surface passivation on p- and n-type silicon wafers, as determined from carrier lifetime measurements.(11,12) Using lowtemperature plasma-assisted ALD SRVs<13cm/s we”