Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
By G. Dingemans, R. Seguin, P. Engelhart, Van de Sanden, W. E. Kessels. 2010
208 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/36e3f22a1a5721ac5b530c2fe3b2f3e7327c1eb0
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Citations in the corpus
- Review of status developments of high-efficiency crystalline silicon solar cells (2018, background): “On one hand, by saturating the dangling bonds on the silicon rear surface, Al2O3 shows outstanding chemical passivation; on the other hand, high fixed negative charge density(~Qfix = 1013 cm−2) enable Al2O3 as an excellent field effect passivation scheme [31].”