Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

By Nm Nick Terlinden, G. Dingemans, Van de Sanden, W. Kessels. 2010

133 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b6df4d0e1f3ec71ab53e5e79b2be8389c511d8de