Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

By A. Tallarico, S. Stoffels, P. Magnone, N. Posthuma, Enrico Sangiorgi, S. Decoutere, C. Fiegna. IEEE Electron Device Letters, 2017

144 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f2796f423b26ba082411a55126be772fc959a2a5

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In Electrical and Electronic Engineering

1. G. Iannaccone

Citations in the corpus

• Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, background): “In low-leakage Schottky gate devices, instead, the reversebiased Schottky junction must withstand a high electric field under gate stress conditions, and gate breakdown might occur due to the formation of stress-induced percolation paths, as in insulated gate devices [14]–[16].”
• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “[90] concluded that the time to failure is a function of the initial Schottky gate leakage and the breakdown mechanism is ascribed to the percolation path in the p-GaN layer.”