Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

By Luca Sayadi, G. Iannaccone, S. Sicre, O. Häberlen, G. Curatola. IEEE Transactions on Electron Devices, 2018

195 citations recorded by the source corpus.

We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that, under gate stress, in the case of high-leakage Schottky contact, a negative threshold voltage shift results from hole accumulation in the p-GaN region. Conversely, in the case of low-leakage Schottky contact, hole depletion in the p-GaN region gives rise to a positive threshold voltage shift. More generally, we show that an imbalance between the hole tunneling current through the Schottky barrier and the thermionic current across the AlGaN barrier results in a variation of the total charge stored in the p-GaN region, which in turn is responsible for the observed threshold voltage shift. Finally, we present a simplified equivalent circuit model for the p-GaN gate module.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/4eb4f7638f9d2e73991102fe9b4ba3ca963d8a6d

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In Condensed Matter Physics

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Citations in the corpus

• VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018, background): “[10] suggest that the balance between the supply and emission of holes in the p-GaN layer causes VTH shift.”
• Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019, background): “gested, including hole emission from the p-GaN layer, which causes a deficiency of holes [17], [18]; electron trapping in the”