SiC power devices — Present status, applications and future perspective

By M. Ostling, R. Ghandi, C. Zetterling. 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011

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The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET (2015, background): “SiC power MOSFETs appear relatively late because of the questionable reliability of the gate dielectrics [8].”
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling (2019, background): “power handling capacity, and larger thermal conductivity, which are desirable for high-efficiency and high-power-density power converters [1]–[4].”
The Benefits of SiC mosfets in a T-Type Inverter for Grid-Tie Applications (2017, background): “Among the various switching devices to date, IGBTs have found commonplace usage within power converter systems operating at voltages in the range of 1000 V and currents of several amperes because of their relatively low on-state voltage compared to a Si FET device, whose specific on-resistance is pr”