Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

By Hyungtak Kim, R. Thompson, V. Tilak, T. Prunty, James R. Shealy, Lester F. Eastman. IEEE Electron Device Letters, 2003

185 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0413a21592cdecc33870b43e1206678f0cf8ca7f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Enrico Zanoni
3. Jungwoo Joh
4. Giovanni Verzellesi
5. J. D. del Alamo
6. Matteo Meneghini
7. S. Karpov

In Electrical and Electronic Engineering

1. Gaudenzio Meneghesso
2. Enrico Zanoni
3. Jungwoo Joh
4. J. D. del Alamo
5. Matteo Meneghini

Citations in the corpus

• Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “On the other hand, the gm degradation after a 12-h OFF-state dc stress was reported not to be recoverable by UV laser illumination in [3].”
• GaN HEMT reliability (2009, unknown): “All rights reserved.”
• Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (2006, background): “The prevailing hypothesis is hot-electron induced trap formation ( 1-3 ).”