Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

By Rui Li, Xinke Wu, Shu Yang, Kuang Sheng. IEEE transactions on power electronics, 2019

168 citations recorded by the source corpus.

The dynamic <sc>on</sc>-state resistance (<italic>R</italic><sub>DSON</sub>) behavior of commercial GaN devices is very important for a GaN-based converter. Since the zero-voltage switching techniques are popular in high-frequency power conversion, a dynamic <italic>R</italic><sub>DSON</sub> test board integrating both hard- and soft-switching test circuits is built in this study. Two types of commercial GaN devices are tested and compared under hard- and soft-switching conditions by double-pulse and multipulse test modes, respectively. It has been found that their dynamic <italic>R</italic><sub>DSON</sub> exhibit different behaviors depending on the <sc>off</sc>-state voltage and frequency under hard- and soft-switching conditions due to different device technologies, which should be taken fully into account for GaN-based converter design and loss estimation. In order to simulate the <italic>R</italic><sub>DSON</sub> behavior in a steady-state operating converter, a multipulse measurement has been implemented, the results of which are compared with that of double-pulse test. Furthermore, the primary trapping mechanisms responsible for dynamic <italic>R</italic><sub>DSON</sub> increase under different switching conditions are identified and verified by the numerical device simulation using Silvaco TCAD tool.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1a0186fc613fb4634c81f4ccc1c275d53d446778

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In Condensed Matter Physics

  1. Shu Yang
  2. Kuang Sheng
  3. Shaowen Han
  4. Kevin J. Chen

In Electrical and Electronic Engineering

  1. Shu Yang
  2. Kuang Sheng
  3. Kevin J. Chen
  4. Shaowen Han

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