AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation

By T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura. IEEE Electron Device Letters, 2007

144 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a138a41038084a869f524e0d744266397f9dfc95

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Citations in the corpus

• Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics (2010, methodology): “There are several approaches to realizing an enhancement-mode operation for GaN HEMTs such as a gate-recess structure, F-treatment [2], [14], and an introduction of a cap layer [3].”
• p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current (2013, background): “Recently, GaN HEMTs with a p-GaN gate stack (p-GaN gate HEMTs) have been suggested as one of the candidates, in which a p-GaN layer on top of the AlGaN barrier depletes the 2-D electron gas carriers in the channel [2]–[7].”