T. Nozawa
Condensed Matter Physics · with Oka · 2008
A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 6 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 8 citations into it; #633 of 1,948 by trust here, #1,117 by citations
- Electronic, Optical and Magnetic Materials — 5 citations into it; #675 of 2,886 by trust here, #2,390 by citations
Whom T. Nozawa trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts T. Nozawa overall
Papers from T. Nozawa's perspective
Ordered by how strongly the researchers T. Nozawa trusts endorse each paper. Same corpus, a different order for every researcher.
- Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
- Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (IEEE Transactions on Electron Devices)
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
- Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (IEEE Transactions on Electron Devices)
- Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (IEEE Transactions on Electron Devices)
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- AlGaN/GaN HEMTs-an overview of device operation and applications (Proceedings of the IEEE)
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)