GaN on Si Technologies for Power Switching Devices

By M. Ishida, T. Ueda, Tsuyoshi Tanaka, D. Ueda. IEEE Transactions on Electron Devices, 2013

368 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0759a165ffbfa5eec68760bdaec86a344d392378

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Shu Yang
2. Kuang Sheng
3. Shaowen Han
4. Kevin J. Chen
5. Gaudenzio Meneghesso

In Electrical and Electronic Engineering

1. Shu Yang
2. Kuang Sheng
3. Kevin J. Chen
4. Gaudenzio Meneghesso
5. Shaowen Han

Citations in the corpus

• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, methodology): “been developed: 1) two-chip hybrid cascode configuration with a low-voltage Si metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage normally on GaN metal-insulator-semiconductor (MIS)-HEMT [6], [12] and 2) single-chip normally off GaN transistor by implementing p-type (Al)Ga”
• Reliability and parasitic issues in GaN-based power HEMTs: a review (2016, background): “Thanks to the excellent properties of the material, kW-range power converters with efficiency higher than 99% have already been demonstrated [4].”