A Survey of Wide Bandgap Power Semiconductor Devices

By J. Millán, P. Godignon, X. Perpiñà, A. Pérez‐Tomás, J. Rebollo. IEEE transactions on power electronics, 2014

2,204 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fa869b0aa9582e9b6d894c72e0d5bfd885c445d5

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In Condensed Matter Physics

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Citations in the corpus

Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling (2019, background): “power handling capacity, and larger thermal conductivity, which are desirable for high-efficiency and high-power-density power converters [1]–[4].”
Design and Experimentation of WPT Charger for Electric City Car (2015, background): “Due to the wide band gap of the SiC material and the consequent high breakdown voltage, these power devices benefit from a thinner voltage blocking layer that, together with the higher drift velocity of the free charges, reduces the parasitic capacitance of the power devices and gives them the abili”
Review of Silicon Carbide Power Devices and Their Applications (2017, background): “Material properties comparison between Si and SiC (ranges 1−5 are marked for all five properties) [3].”
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “the power density and efficiency of power electronic systems [1]–[3].”
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, background): “In particular, the increasing demand for power switching applications, requiring normally-off devices for safety, power consumption and cost reasons [3], pushes the interest in developing and manufacturing enhancement-mode GaN-on-Si power transistors.”
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “development of wide bandgap (WBG) semiconductor devices [1]-[3] and their applications in power electronics [4].”
Automotive Traction Inverters: Current Status and Future Trends (2019, background): “Currently Silicon Carbide (SiC) and Gallium Nitride (GaN) are the most promising WBG materials due to their characteristics and commercialization progress [69].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “At the same time, wide-bandgap (WBG) semiconductor materials, including silicon carbide (SiC) and gallium nitride (GaN) [1], have presented multiple advantages over Si.”
Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs (2016, background): “It is clear that SiC and GaN device show good performance under different ambient temperatures due to WBG device properties [1].”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “Among the UWBG semiconductors, diamond and AlN have the theoretical best-in-class power material figure-of-merit [142, 143].”
A Multiloop Method for Minimization of Parasitic Inductance in GaN-Based High-Frequency DC–DC Converter (2017, background): “IN RECENT years, gallium nitride high electron mobility transistors (GaN HEMTs) have been proven to have great advantages for improving efficiency and power density of dc–dc converters [1]–[4].”
The rise of electric vehicles—2020 status and future expectations (2021, positive): “Higher levels of integration go hand-in-hand with the utilization of wide-bandgap (WBG) semiconductor devices, which may be used at higher operational temperatures (e.g. >200 ◦ C versus 150 ◦ C for silicon) with reduced switching loss (Mill ´ an et al 2014).”