High-performance E-mode AlGaN/GaN HEMTs

By Tomás Palacios, C. Suh, A. Chakraborty, Sarah L. Keller, Steven P. DenBaars, Umesh K. Mishra. IEEE Electron Device Letters, 2006

183 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/9115244bea4b8fa3081784b1cdb81a18329be741

Citations in the corpus

• A Survey of Wide Bandgap Power Semiconductor Devices (2014, unknown): “As a result, high-performance AlGaN/GaN HEMTs on Si substrates with blocking voltages higher than 1 kV [49], and high-voltage/low specific on-resistance HEMTs on semiinsulating SiC substrates [50] have been reported, the latter exhibiting a record of the V 2BR /RON figure of merit (∼2.3 × 109 V2 /Ω·”