High-power phosphor-converted light-emitting diodes based on III-Nitrides
By R. Mueller-Mach, G. Mueller, Michael R. Krames, T. Trottier. 2002
443 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/7c083eca43954d83962dcbc0ec901bedb5f7a16c
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Michael R. Krames
- Arturas Zukauskas
- Michael S. Shur
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- G. Mueller
- R. Mueller-Mach
In Electrical and Electronic Engineering
- Arturas Zukauskas
- Michael S. Shur
- Matteo Meneghini
- Gaudenzio Meneghesso
- Enrico Zanoni
- Prabhakar V. Varde
- Michael G. Pecht
- Diganta Das
In Materials Chemistry
- Michael S. Shur
- Arturas Zukauskas
- Prabhakar V. Varde
- Michael G. Pecht
- Diganta Das
- Moon-Hwan Chang
- M. Crawford
- S. Karpov
Citations in the corpus
- Illumination with solid state lighting technology (2002, background): “RGB mixing is the most efficient way to make white light from LEDs since there is no quantum deficit (arising from the Stokes shift characteristic of photonic energy down-conversion of the phosphor [ 22 ]), and offers infinitely graduated color and white point control.”
- Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, methodology): “Suitable white light spectra from LEDs are possible using a two-phosphor approach, wherein a yellow or green phosphor is combined with a red one, all pumped by a single blue LED [53].”
- Light emitting diodes reliability review (2012, background): “CRI > 80 is regarded as good; in the 1970s is regarded as plain or acceptable [169,171].”
- Research challenges to ultra‐efficient inorganic solid‐state lighting (2007, methodology): “Emission can be red-shifted by partially substituting Gd for Y, although a high concentration of Gd also causes strong thermal quenching of quantum efficiency [58].”
- A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs (2010, background): “The ESD robustness of GaN-based LEDs can be therefore optimized by increasing the Si-doping concentration close to the active region of the devices [ 22 ].”