InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

By Jonathan J. Wierer, Michael R. Krames, J. Epler, N. Gardner, M. Craford, J. Wendt, J. Simmons, M. Sigalas. 2004

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Research challenges to ultra‐efficient inorganic solid‐state lighting (2007, methodology): “For InGaN based LEDs, this approach has been used to improve light extraction as well as to modify the far field pattern, directing light in a preferred direction [101].”
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, methodology): “Finally, tailoring of the far-field radiation pattern is possible [48], suggesting that in the future sophisticated lensing operation may be incorporated directly”
History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes (2008, background): “demonstrated to match the performance of commercially available state-of-the-art LEDs [143].”
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, methodology): “of InGaN-based PXLEDs using this approach [78], [80].”
III-Nitride Ultraviolet Emitters: Technology and Applications (2015, background): “Today, the best InGaN-based blue LEDs boast external quantum efficiencies (EQE) of 84 % and wall plug efficiencies (WPE) of 81 % [69] and commercial blue LEDs exhibit EQEs of 69 % and WPEs of 55 %, respectively [70].”
Enhancement of light extraction from light emitting diodes (2011, neutral): “The penetration depthwas estimated as [609,272,577]”