Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

By M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, T. Mukai. 2006

354 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e4ed8bc97c20a932d7b014947141a73fa96df6a7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Michael R. Krames
2. Steven P. DenBaars
3. Shuji Nakamura
4. Umesh K. Mishra
5. G. Mueller
6. R. Mueller-Mach
7. H. Masui
8. M. Crawford

In Electronic, Optical and Magnetic Materials

1. Umesh K. Mishra
2. B. Baliga

In Materials Chemistry

1. Umesh K. Mishra
2. Steven P. DenBaars

Citations in the corpus

• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “Green, yellow, and amber light emission have been realized on (112̄2) with reasonable optical output [83]– [85].”
• Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, background): “While epitaxial growth on other planes ( -, -, or even in between) can be exploited to achieve a zero-field situation, the materials quality rendered by these approaches is to date inferior to the case of c-plane growth, and the (documented) performance of non-plane LEDs reflects this [22]–[24].”