Band parameters for III–V compound semiconductors and their alloys

By I. Vurgaftman, J. Meyer, L. Ram-Mohan. 2001

6,841 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0d7fa20b3df32e4e8bd3f62378373b6db79a7f03

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. J. Sinova
2. T. Jungwirth
3. Michael R. Krames
4. Allan H. MacDonald
5. J. Masek
6. Jan Kucera
7. P. Lodahl
8. E. Rossi

In Electrical and Electronic Engineering

1. P. Lodahl
2. J. Sinova
3. Stanislav Vitanov
4. Rüdiger Quay
5. Stephan Maroldt
6. Allan H. MacDonald
7. T. Jungwirth
8. T. W. Berg

Citations in the corpus

• Antimonide-based compound semiconductors for electronic devices: A review (2005, neutral): “2 Å lattice constant [3].”
• A review of recent progress in heterogeneous silicon tandem solar cells (2018, methodology): “Bandgaps against lattice constants of silicon, germanium and III–V semiconductors, based on the material parameters presented in [9].”
• Theory of ferromagnetic (III, Mn) V semiconductors (2006, methodology): “If the KL Hamiltonian parameters are taken from the known values for the host III-V compound (Vurgaftman et al., 2001), the strength of this exchange interaction Jpd can be extracted from one set of data, for example from spectroscopic studies of isolated Mn acceptors as explained in Section II.”