High-power AlGaInN flip-chip light-emitting diodes

By Jonathan J. Wierer, D. Steigerwald, Michael R. Krames, J. O'shea, M. Ludowise, G. Christenson, Y. Shen, C. Lowery, Paul S. Martin, S. Subramanya and 4 more. 2001

408 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/d62dd9a809e548603bb5589c302727ed2b30be78

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Michael R. Krames
2. Arturas Zukauskas
3. Michael S. Shur
4. G. Mueller
5. R. Mueller-Mach
6. Xiaobing Luo
7. Sheng Liu
8. Kai Wang

In Electrical and Electronic Engineering

1. Arturas Zukauskas
2. Michael S. Shur
3. Xiaobing Luo
4. Michael R. Krames

In Electronic, Optical and Magnetic Materials

1. Xiaobing Luo
2. Sheng Liu
3. Kai Wang
4. Run Hu

Citations in the corpus

• Solid-State Lighting: Toward Superior Illumination (2005, background): “Such are InGaN LEDs in the blue region [16], [41] and AlGaInP LEDs in the red to orange region [42].”
• Heat and fluid flow in high-power LED packaging and applications (2016, background): “Compared to conventional LEDs, the flip-chip LED is “flipped-over” or inverted [9].”
• High-power light-emitting diode based facility for plant cultivation (2005, background): “Such LEDs with the electric power of up to 5 W have already been put on the market [14].”
• Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, background): ““FC(Al)” and “FC(Ag)” refer to Al-based [36] and Ag-based [37] mirror technologies for flip-chip LEDs.”
• Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact (2010, background): “To resolve this problem, flip-chip LEDs have been introduced [10], [159].”