Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

By N. Gardner, James C. Kim, Jonathan J. Wierer, Y. Shen, Michael R. Krames. 2005

200 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/77e9085738649c9366906931c5cc13d526932712

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In Condensed Matter Physics

1. Michael R. Krames
2. Steven P. DenBaars
3. Shuji Nakamura
4. Umesh K. Mishra
5. ByShuji Nakamura
6. G. Mueller
7. R. Mueller-Mach
8. H. Masui

In Materials Chemistry

1. Umesh K. Mishra
2. Steven P. DenBaars

In Mechanics of Materials

1. Steven P. DenBaars
2. Michael R. Krames
3. Umesh K. Mishra
4. Shuji Nakamura

Citations in the corpus

• Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, background): “While epitaxial growth on other planes ( -, -, or even in between) can be exploited to achieve a zero-field situation, the materials quality rendered by these approaches is to date inferior to the case of c-plane growth, and the (documented) performance of non-plane LEDs reflects this [22]–[24].”
• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, methodology): “[51] on m-plane SiC and by Chakraborty et al.”
• History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination (2013, background): “About the same time, strong polarized electroluminescence with polarization perpendicular to the c-axis was observed for the LEDs grown on the GaN grown on the m-plane SiC substrate [50].”