High performance thin-film flip-chip InGaN–GaN light-emitting diodes

By O. Shchekin, J. Epler, T. Trottier, T. Margalith, D. Steigerwald, M. Holcomb, Paul S. Martin, Michael R. Krames. 2006

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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, methodology): “4) Thin-Film Flip Chip (TFFC): An alternative design is the TFFC structure [43], which combines the benefits of the VTF chip with the improved robustness, heat removal, and wirebondfree characteristics of FC LEDs.”
Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012, background): “On the other hand, many LED makers started to emphasize the vertical LED architectures due to their many advantages over transverse or lateral counterparts [41]–[44].”
Research challenges to ultra‐efficient inorganic solid‐state lighting (2007, background): “9 (reprinted from [47]), has been demonstrated by combining flip chip mounting, substrate removal, reflective metal contacts, and surface texturing [47, 84].”
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, background): “The use of state-of-the-art flip-chip designs with one-side electrode access to both n- and p-contact layers (Shchekin et al. 2006; Laubsch et al. 2010) enables considerable reduction of the above shading effect.”
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, methodology): “This design has been applied to both InGaN [72], [73] and AlInGaP LEDs [74], and employs several features to enhance light extraction.”