Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
By A. David, M. Grundmann, J. Kaeding, N. Gardner, T. Mihopoulos, Michael R. Krames. 2008
343 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f351d32cae1968b6308ab002dc09ddb754eb6f76
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, background): “Being largely avoided in SQW active regions, the above problem may become important in the case of MQW structures (David et al. 2008; Galler et al. 2011).”
- Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “recently postulated that localization effects on conventional -plane InGaN QWs result in very high local carrier densities and expedite the onset of droop [40], [41].”
- High-Power and High-Efficiency InGaN-Based Light Emitters (2010, background): “[19] report that, for typical InGaN/GaN MQW LEDs, only the topmost QW adjacent to the p-side contributes to the light emission.”