Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

By N. Gardner, G. O. Müller, Y. Shen, G. Chen, S. Watanabe, W. Götz, Michael R. Krames. 2007

440 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/cb43ca52b220d7b104e1fb861b3c51573da2b2be

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Y. Ee
7. Steven P. DenBaars
8. Xiao-Hang Li

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee

In Mechanics of Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Guangyu Liu
5. Y. Ee
6. Jing Zhang
7. Steven P. DenBaars

Citations in the corpus

• High-Power and High-Efficiency InGaN-Based Light Emitters (2010, methodology): “Furthermore, the possibility for further enhancement of Auger rates due to defect-assisted Auger recombination [24] in InGaN QWs also needs to be investigated in the future.”
• III-Nitride Photonics (2010, background): “[ The use of c-plane InGaN-based QW LEDs suffers from the reduction in efficiency at high operating current density, which is referred as Befficiency-droop[ [25]–[35].”
• Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008, background): “The typical current density in LED devices ranges from 20 up to 200 A cm [23]–[25], which corresponds to the typical carrier density ranging from 2–5 10 cm up to 1 10 cm [25]–[27].”